ECE-4234: Semiconductor Processing
Description: Manufacturing practices used in silicon integrated circuit fabrication and the underlying scientific basis for these process technologies. Physical models are developed to explain basic fabrication steps, such as substrate growth, thermal oxidation, dopant diffusion, ion implantation, thin film deposition, etching, and lithography. The overall CMOS integrated circuit process flow is described within the context of these physical models.
Pathways: N/A
Course Hours: 3 credits
Sections Taught: 8
Average GPA: 3.23 (B+)
Strict A Rate (No A-) : 45.21%
Average Withdrawal Rate: 0.00%
| Masoud Agah | 2007 | 24.3% | 60.1% | 12.6% | 3.0% | 0.0% | 0.0% | 3.06 | 3 |
| Kathleen Meehan | 2012 | 60.0% | 17.3% | 11.5% | 6.4% | 4.8% | 0.0% | 3.16 | 3 |
| Mariusz K Orlowski | 2013 | 51.7% | 31.0% | 17.2% | 0.0% | 0.0% | 0.0% | 3.39 | 1 |
| Robert W Hendricks | 2005 | 88.9% | 0.0% | 11.1% | 0.0% | 0.0% | 0.0% | 3.78 | 1 |