MSE-5200: Semiconductor Alloys and Heterostructures
Description: Advanced treatment of semiconductor materials with an emphasis on binary compounds, ternary and quaternary alloys, and strained-layer structures. Topics include crystal structure; lattice vibrations and phonons; energy band structure; equilibrium and non-equilibrium carrier distributions; electron and hole transport via diffusion and drift; and carrier generation and recombination mechanisms. Graduate standing required in the College of Engineering or College of Science.
Pathways: N/A
Course Hours: 3 credits
Sections Taught: 5
Average GPA: 3.98 (A)
Strict A Rate (No A-) : 94.28%
Average Withdrawal Rate: 0.00%
| Louis J Guido | 2020 | 100.0% | 0.0% | 0.0% | 0.0% | 0.0% | 0.0% | 4.00 | 3 |
| Levon V Asryan | 2024 | 100.0% | 0.0% | 0.0% | 0.0% | 0.0% | 0.0% | 3.96 | 2 |