ECE-5204: Power Semiconductor Devices
Description: Characteristics, fabrication, and application of power semiconductor devices, which may include p-i-n and Schottky diodes, insulated gate biopolar transistors, field effect transistors, and thyristors. Effect of semiconductor material, device structure, and current injection levels on device performance. Device drive requirements and power circuit interaction. Implementation of power devices using wide band gap semiconductors such as silicon carbide and gallium nitride.
Pathways: N/A
Course Hours: 3 credits
Corequisites: N/A
Crosslist: N/A
Repeatability: N/A
Sections Taught: 17
Average GPA: 3.79 (A)
Strict A Rate (No A-) : 67.31%
Average Withdrawal Rate: 0.00%
| Yuhao Zhang | 2023 | 78.0% | 21.3% | 0.0% | 0.7% | 0.0% | 0.0% | 3.75 | 8 |
| Louis J Guido | 2017 | 91.1% | 9.0% | 0.0% | 0.0% | 0.0% | 0.0% | 3.88 | 6 |
| Ming Xu | 2008 | 96.5% | 3.5% | 0.0% | 0.0% | 0.0% | 0.0% | 3.98 | 2 |
| Kathleen Meehan | 2011 | 41.2% | 47.0% | 11.8% | 0.0% | 0.0% | 0.0% | 3.28 | 1 |