ECE-3214: Semiconductor Device Fundamentals
Description: Fundamental semiconductor device physics associated with intrinsic and doped semiconductor materials, drift-diffusion of charge carriers, and devices with an in-depth coverage of p-n and Schottky diodes, bipolar junction transistors, and metal-oxide semiconductor and junction field effect transistors.
Pathways: N/A
Course Hours: 3 credits
Corequisites: N/A
Crosslist: N/A
Repeatability: N/A
Sections Taught: 12
Average GPA: 3.49 (A-)
Strict A Rate (No A-) : 30.25%
Average Withdrawal Rate: 2.51%
| Mantu K Hudait | 2023 | 60.4% | 37.1% | 2.0% | 0.0% | 0.4% | 0.2% | 3.54 | 8 |
| Yuhao Zhang | 2024 | 42.7% | 47.5% | 0.0% | 1.1% | 1.6% | 7.2% | 3.39 | 4 |